Numerical Simulation of Field Emission of Silicon Cathode
Huangfu Lujiang,Zhu Changchun
(Xi'an Jiaotong University, Xi'an 710049, China)

Abstract: The basic equations of semiconductor are solved numerically for simulating the field emission of silicon cathode that may be affected by electron transportation. Use are made of the extended drift-diffusion model and coupled field emission equation. Impact ionization is found to play an important role. The study led to a better understanding of the internal state of a silicon emitter.
Keywords: silicon;field emission;electron transportation;impact ionization