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| ¡¡ Etching Process for Residual Resist Layer in
Ultravioletª²Imprint Lithography Abstract£ºA reactive ion etching (RIE) cleaning the residual resist layer away by O2
was presented in UVª²imprint lithography£®The important etching parameters affecting
etching rate and anisotropy£¬such as the flow rate of O2 £¬pressure in
reactor£¬rdio feqency(RF) power were investigated£¬and the relationship among these
parameters and the etching rate and etching anisotropy was deduced£®The experimental
results show that the low etching rate and anisotropy correspond to the low flow rate of
the etching gas and low gas pressure£®When the RF power is 200W£¬pressure 0.6 Pa£¬and
the flow rate 30 mL/min£¬a stable etching rate(265 nm/min) and a high anisotropy(13) are
obtained to perfectly transfer the patterns in UVª²imprint lithography£® |
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