Wu Huizhuo
(School of Sciences,Xi'an Jiaotong University,Xi'an 710049,China)
Abstract:The asymptotic behaviours of the solutions to the initial boundary value problem for semiconductors drift diffusion equations are investigated.Under the proper assumptions on doping profile and initial value,the smooth solution to the evolutionary problems more rapidly tends to the unique stationary solution exponentially as time reaches to infinity,and the convergence of this problem is proved simultaneously. Some of hypotheses for the press function are weakened via estimating the nom L2,the practical application is widened obviously,and under the constant doping profile,the asymptotic behaviours can be extended to apply in a bipolar situation.
Keywords:drift-diffusion equations;initial boundary value problem; asymptotic behavior;global smooth solution