Ren Chengyan,Cheng Yonghong,Chen Xiaolin,Xie Xiaojun,Yang Yue
(State Key Laboratory of Electrical Insulation for Power Equipment,Xi'an Jiaotong University,Xi'an 710049,China)
Abstract:In order to simulate different breakdown processes and different time processes of partial discharge £¨PD£© in voids,the variable void resistance model based on the physical inherence of PD in voids was used£® Three different discharge processes (void breakdown,interface discharge of void,breakdown and interface discharge at the same time) and three different breakdown time processes (microsecond order,subª²nanosecond order,and nanosecond order) were studied respectively to obtain their discharge properties.Moreover,electron avalanche in discharge process was simulated£® The discrepancies among PD waveforms of different discharge processes and different breakdown time were found.The simulation results under the condition of electron avalanche are very similar to the measured waveforms,which is the foundation of further studies on the physical and chemical process of PD£®
Keywords:partial discharge;numerical simulation;single void;void resistance