Investigation on Passivating Silicon Nitride Surface of Crystalline Silicon Solar Cells
Yang Hong¹,Wang He¹,Yu Huacong²,Xi Jianping²,Hu Hongxun²,Chen Guangde¹
(1.School of Sciences,Xi'an Jiaotong　University,Xi'an 710049,China；
2.Institute of Solar Energy,Shanghai Jiaotong University)

Abstract：In order to improve photoelectric conversion efficiency of crystalline silicon solar cells，some effects of surface passivation quality and antireflection properties of silicon nitride prepared by plasma enhanced chemical vapour deposition on crystalline silicon solar cells are investigated. All kinds of crystalline silicon solar cells were prepared by different process methods. It was found that the silicon nitride/silicon oxide double layer optical antireflection coatings structure shows excellent passivation properties for crystalline solar cells compared to silicon nitride, so photoelectric conversion efficiency of crystalline silicon solar cells is enhanced. Based on interface physics, a new energy band model of silicon nitride/silicon oxide/silicon is presented, differences of efficiency of crystalline silicon solar cells prepared by different methodes are explained by this model.
Keywords：solar cells;surface passivation;silicon nitride;plasma enhanced chemical vapour deposition